Combinatorial atmospheric pressure chemical vapor deposition (cAPCVD): A route to functional property optimization

Journal of the American Chemical Society

Volumn 133, Issue 50, 2011, Pages 20458-20467

  Kafizas, Andreas ^a   Parkin, Ivan P ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANATASE TIO; ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; COMPOSITIONAL GRADIENTS; CRYSTAL PLANES; DIVERSE RANGE; FILM CRYSTALLINITY; FUNCTIONAL PROPERTIES; GROWTH CONDITIONS; HIGH-THROUGHPUT METHOD; LATERAL PLANE; METAL SOURCES; PHASE SPACES; PHOTO-INDUCED SURFACES; PHOTOCATALYTIC ACTIVITIES; PREFERRED GROWTH; SELF-CLEANING PROPERTIES; SINGLE GLASS SUBSTRATES;

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; CHEMICAL ANALYSIS; CHEMICAL CLEANING; CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; PHASE SPACE METHODS; PHOTOCATALYSIS; SEMICONDUCTOR DOPING; SUBSTRATES; TITANIUM DIOXIDE; TUNGSTEN; WETTING;

FILM GROWTH;

TITANIUM DIOXIDE; TUNGSTEN;

ARTICLE; ATMOSPHERIC DEPOSITION; ATMOSPHERIC PRESSURE; COMBINATORIAL ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; COMBINATORIAL CHEMISTRY; CONDUCTANCE; CRYSTALLIZATION; FILM; GAS FLOW; PHOTOCATALYSIS; PROCESS OPTIMIZATION; QUANTUM YIELD; SURFACE PROPERTY; VAPOR PRESSURE; X RAY DIFFRACTION;

EID: 83755171351     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja208633g     Document Type: Article

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