GaAs surface modifications under Au evaporating flux

Applied Surface Science

Volumn 211, Issue 1-4, 2003, Pages 335-340

  Lioubtchenko, D V ^a   Markov, I A ^b   Briantseva, T A ^b  

^a AALTO UNIVERSITY   (Finland)

^b INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

Author keywords

Au; GaAs; SAW; Thermal evaporation

Indexed keywords

EVAPORATION; GOLD; PHASE TRANSITIONS; SEMICONDUCTING GALLIUM ARSENIDE; SOLID SOLUTIONS;

EVAPORATING FLUX;

SURFACE TREATMENT;

EID: 0038671665     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00356-8     Document Type: Article

References (10)

1. M. Shur, GaAs Devices and Circuits, Plenum Press, New York, 1987.
2. T.A. Briantseva, D.V. Lioubtchenko, in: The Science and Technology of Millimetre Wave Components and Devices, Gordon and Breach, UK.
3. Braslau N. J. Vac. Sci. Technol. 19:1981;803.
4. Leung S., Yoshiie T., Bauer C.L., Milnes A.G. J. Electrochem. Soc. 132:1985;898.
5. Briantseva T.A., Bullough T.J., Lioubtchenko D.V., Markov I.A., Tolmachev E.M. Phys. B. 263:1999;84.
6. Lioubtchenko D.V., Markov I.A., Briantseva T.A. Appl. Surf. Sci. 195:2002;42.
7. D.V. Lioubtchenko, I.A. Markov, T.A. Briantseva, V.E. Lyubchenko, Proceedings of the Wocsdice 2001, Italy, 2001.
8. V.E. Pluschev, S.B. Stepina, P.I. Fiodorov, in: K.A. Bolshakov (Ed.), Chemistry and Technology of Rare and Disseminated Elements, Part 1, Visshaya Shkola, Moscow, 1976.
9. Briantseva T.A., Lioubtchneko D.V., Lopatin V.V. Appl. Surf. Sci. 100/101:1996;169.
10. Briantseva T.A., Lebedeva Z.M., Markov I.A., Bullough T.J., Lioubtchenko D.V. Appl. Surf. Sci. 143:1999;223.