Well-controlled, selectively under-etched Si/SiGe gates for RF and high performance CMOS

Digest of Technical Papers-Symposium on VLSI Technology

Volumn , Issue , 2000, Pages 156-157

  Skotnicki, T ^a,b   Jurczak, M ^b,c   Martins, J ^a   Paoli, M ^b   Tormen, B ^a   Pantel, R ^b   Hernandez, C ^a,b   Campidelli, I ^b   Josse, E ^b   Ricci, G ^b   Galvier, J ^a,b  

^a STMICROELECTRONICS   (France)

^b ORANGE LABS   (France)

^c WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TRANSCONDUCTANCE;

SILICON GERMANIDE;

CMOS INTEGRATED CIRCUITS;

EID: 0033682137     PISSN: 07431562     EISSN: None     Source Type: Journal    
DOI: 10.1109/VLSIT.2000.852807     Document Type: Article

References (8)

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