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Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 654-660

Effect of oxidation on charge localization and transport in a single layer of silicon nanocrystals

(9) Krishnan, R a Xie, Q b Kulik, J b Wang, X D b Lu, S b Molinari, M a Gao, Y c Krauss, T D c Fauchet, P M a

a University of Rochester (United States)

b MOTOROLA INC (United States)

c UNIVERSITY OF ROCHESTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE LOCALIZATION; MICROELECTRONIC PROCESSES; NANOCRYSTAL MEMORIES; NANOCRYSTAL MEMORY CELLS;

CHARGE TRANSFER; CRYSTALLIZATION; DIFFUSION; ELECTRIC FIELDS; ELECTRIC POWER UTILIZATION; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; OXIDATION; SILICA;

SILICON;

EID: 3142700089 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1751632 Document Type: Article

Times cited : (22)

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