A mobile Sn nanowire inside a β-Ga2O3 tube: A practical nanoscale electrically/thermally driven switch

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Volumn 7, Issue 23, 2011, Pages 3377-3384

  Zou, Rujia ^a   Zhang, Zhenyu ^a   Tian, Qiwei ^a   Ma, Guanxing ^a   Song, Guosheng ^a   Chen, Zhigang ^a   Hu, Junqing ^a  

^a DONGHUA UNIVERSITY   (China)

Author keywords

Ga2O3; crystal phases; electrical resistance; switches; tin

Indexed keywords

APPLIED CURRENT; CRYSTAL PHASE; CRYSTAL PHASES; ELECTRICAL BEHAVIORS; ELECTRICAL RESISTANCE; FAST SWITCHING; IN-SITU OBSERVATIONS; LINEAR THERMAL EXPANSIONS; NANO ELECTROMECHANICAL SYSTEMS; NANO SCALE; SWITCH STRUCTURE; THERMALLY DRIVEN; TRANSMISSION ELECTRON MICROSCOPE;

ELECTRIC PROPERTIES; ELECTROSTATIC DEVICES; GALLIUM; LIQUIDS; NANOTECHNOLOGY; NANOWIRES; PHASE TRANSITIONS; SWITCHES; SWITCHING CIRCUITS; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY; TUBES (COMPONENTS);

TIN;

GALLIUM; GALLIUM OXIDE; GOLD; NANOWIRE; TIN;

ARTICLE; CHEMISTRY; ELECTRICITY; ELECTRODE; INSTRUMENTATION; NANOTECHNOLOGY; PHASE TRANSITION; TEMPERATURE; THERMOMETER; ULTRASTRUCTURE;

ELECTRICITY; ELECTRODES; GALLIUM; GOLD; NANOTECHNOLOGY; NANOWIRES; PHASE TRANSITION; TEMPERATURE; THERMOMETERS; TIN;

EID: 82555194223     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.201101204     Document Type: Article

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