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1-V characteristics for the devices in Figure 2B show a slight nonlinearity at lower temperatures although they are highly linear at room temperature, as would be expected for a Schottky barrier. However, a Schottky barrier of a moderately doped p-type Ppy/Au junction would be expected to be quite small because the work functions of the two materials are quite similar. Therefore, the Au and semiconducting Ppy make an Ohmic-like contact. See ref 14 for a comparison of reported performance values for various bulk metal/Ppy junctions.
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The difference in work function (ΔΦ) between that for a metal such as Cd and that for a moderately doped p-type semiconducting Ppy is ∼0.68 eV, which is larger than that for Au and Ppy (ΔΦ(Au-Ppy) ≈0.1 eV) based on the assumption that the work function of an electrochemically polymerized Ppy film with a similar doping level is 4.9-5.1 eV, reported in refs 14 and 16.
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