|
Volumn 23, Issue 48, 2011, Pages
|
Interface effects on the quantum well states of Pb thin films
|
Author keywords
[No Author keywords available]
|
Indexed keywords
DISPERSION RELATIONS;
EFFECTIVE THICKNESS;
ENERGY CURVE;
ENERGY POSITION;
INTERFACE EFFECT;
INTERFACE MODIFICATION;
METAL FILM;
P-TYPE SI;
PB FILM;
PB THIN FILMS;
QUANTIZATION RULE;
QUANTUM-WELL STATE;
SCANNING TUNNELING SPECTROSCOPY;
SCHOTTKY BARRIERS;
SI (1 1 1);
SILICON SUBSTRATES;
SUBSTRATE INTERFACE;
GOLD;
LEAD;
PHASE SHIFT;
PHASE SHIFTERS;
SCANNING TUNNELING MICROSCOPY;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
SILVER;
SPECTROSCOPY;
SUBSTRATES;
THIN FILMS;
PHASE INTERFACES;
|
EID: 82455216794
PISSN: 09538984
EISSN: 1361648X
Source Type: Journal
DOI: 10.1088/0953-8984/23/48/485001 Document Type: Article |
Times cited : (15)
|
References (49)
|