SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 493, Issue 1-3, 2001, Pages 526-538

Uniform island height selection in the low temperature growth of Pb/Si(1 1 1)-(7 × 7)

(6) Hupalo, M a Kremmer, S c Yeh, V c Berbil Bautista, L c Abram, E c Tringides, M C c

a IOWA STATE UNIVERSITY (United States)

b UNIVERSITY OF LEOBEN (Austria)

c NONE

Author keywords

Growth; Lead; Scanning tunneling microscopy; Silicon

Indexed keywords

CRYSTAL STRUCTURE; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; LEAD; LOW ENERGY ELECTRON DIFFRACTION; NANOSTRUCTURED MATERIALS; PHASE DIAGRAMS; QUANTUM THEORY; SCANNING TUNNELING MICROSCOPY; THERMAL DIFFUSION;

SELF-ORGANIZED NANOSTRUCTURES;

SEMICONDUCTING SILICON;

EID: 0035500478 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01262-6 Document Type: Article

Times cited : (80)

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