Temperature dependence of electronic band transition in Mn-doped SnO 2 nanocrystalline films determined by ultraviolet-near-infrared transmittance spectra

Materials Research Bulletin

Volumn 47, Issue 1, 2012, Pages 111-116

  Chen, X G ^a   Li, W W ^a   Wu, J D ^b   Sun, J ^b   Jiang, K ^a   Hu, Z G ^a   Chu, J H ^a  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b FUDAN UNIVERSITY   (China)

Author keywords

A. Oxides; B. Laser deposition; D. Electronic structure; D. Optical properties

Indexed keywords

ABSORPTION EDGES; B. LASER DEPOSITION; BAND GAP NARROWING; DOPING LEVELS; ELECTRONIC BAND; EMPIRICAL FORMULAS; LOCALIZED STATE; MN-DOPED SNO; NANOCRYSTALLINE FILMS; OPTICAL RESPONSE FUNCTIONS; PHOTON ENERGY RANGE; QUARTZ SUBSTRATE; RED SHIFT; STRUCTURAL DISORDERS; TEMPERATURE DEPENDENCE; TEMPERATURE REGIMES; TRANSMITTANCE SPECTRA; URBACH ENERGY;

ELECTRONIC STRUCTURE; ENERGY GAP; OPTICAL CONSTANTS; OPTICAL PROPERTIES; PULSED LASER DEPOSITION; PULSED LASERS; QUARTZ; SEMICONDUCTOR DOPING; TEMPERATURE DISTRIBUTION;

MANGANESE;

EID: 82255162585     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2011.09.019     Document Type: Article

References (37)

1. Y. Matsumoto, M. Murakami, T. Shono, H. Hasegawa, T. Fukumura, M. Kawasaki, P. Ahmet, T. Chikyow, S. Koshihara, and H. Koinuma Science 291 2001 854 856
2. T. Jungwirth, Sinova Jairo, Mašek J., Kučera J., and A.H. MacDonald Rev. Mod. Phys. 78 2006 809 864
3. Özgür Ü., Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, Doan S., V. Avrutin, Cho S.-J., and Morko H. J. Appl. Phys. 98 2005 041301
4. H. Chou, C.P. Lin, H.S. Hsu, and S.J. Sun Appl. Phys. Lett. 96 2010 092503
5. K. Gopinadhan, S.C. Kashyap, D.K. Pandya, and S. Chaudharya J. Appl. Phys. 102 2007 113513
6. A. Bouaine, N. Brihi, G. Schmerber, Ulhaq-Bouillet C., S. Colis, and A. Dinia J. Phys. Chem. C 111 2007 2924 2928
7. N.H. Hong, N. Poirot, and J. Sakai Phys. Rev. B 77 2008 033205
8. S.B. Ogale, R.J. Choudhary, J.P. Buban, S.E. Lofland, S.R. Shinde, S.N. Kale, V.N. Kulkarni, J. Higgins, C. Lanci, J.R. Simpson, N.D. Browning, Das Sarma S., H.D. Drew, R.L. Greene, and T. Venkatesan Phys. Rev. Lett. 91 2003 077205
9. J.W. Quilty, A. Shibata, J.Y. Son, K. Takubo, T. Mizokawa, H. Toyosaki, T. Fukumura, and M. Kawasaki Phys. Rev. Lett. 96 2006 027202
10. W.L. Yu, W.W. Li, J.D. Wu, J. Sun, J.J. Zhu, M. Zhu, Z.G. Hu, and J.H. Chu J. Phys. Chem. C 114 2010 8593 8600
11. W.W. Li, J.J. Zhu, J.D. Wu, J. Sun, M. Zhu, Z.G. Hu, and J.H. Chu ACS Appl. Mater. Interfaces 2 2010 2325 2332
12. H. Kimura, T. Fukumura, M. Kawasaki, K. Inaba, T. Hasegawa, and H. Koinuma Appl Phys. Lett. 80 2002 94 96
13. S.J. Liu, C.Y. Liu, J.Y. Juang, and H.W. Fang J. Appl. Phys. 105 2009 013928
14. B. Liu, C.W. Cheng, R. Chen, Z.X. Shen, H.J. Fan, and H.D. Sun J. Phys. Chem. C 114 2010 3407 3410
15. G. Sanon, R. Rup, and A. Mansingh Phys. Rev. B 44 1991 5672 5680
16. L.F. Jiang, W.Z. Shen, and Q.X. Guo J. Appl. Phys. 106 2009 013515
17. D. Davazoglou Appl. Phys. Lett. 70 1997 246 248
18. S. Adachi, Phys. Rev. B 61 (1987) 4869-4876
19. S. Adachi, Phys. Rev. B 38 (1988) 12345-12352.
20. T. Kawashima, H. Yoshikawa, S. Adachi, S. Fuke, and K. Ohtsuka J. Appl. Phys. 82 1997 3528 3535
21. I. Bonalde, E. Medina, S.M. Wasim, G. Marin, C. Rincon, A. Rincon, and C. Torres Phys. Rev. B 69 2004 195201
22. L.L. Guo, W.Z. Shen, and Y.H. Zhang J. Appl. Phys. 99 2006 113533
23. J.Z. Zhang, Y.D. Shen, Y.W. Li, Z.G. Hu, and J.H. Chu J. Phys. Chem. C 97 2010 15157 15164
24. W. Zhu, X. Qiu, V. Iancu, X.Q. Chen, H. Pan, W. Wang, N.M. Dimitrijevic, T. Rajh, H.M. Meyer, M.P. Paranthaman, G.M. Stocks, H.H. Weitering, B. Gu, G. Eres, and Z. Zhang Phys. Rev. Lett. 103 2009 226401
25. S.A. Lourenon, I.F.L. Dias, J.L. Duarte, E. Laureto, E.A. Meneses, J.R. Leite, and I. Mazzaro J. Appl. Phys. 89 2001 6159 6164
26. S. Biernacki, U. Scherz, and B.K. Meyer Phys. Rev. B 49 1994 4501 4510
27. M. Cardona Solid State Commun. 133 2005 3 18
28. B.S. Li, Y.C. Liu, Z.Z. Zhi, D.Z. Shen, Y.M. Liu, J.Y. Zhang, and X.W. Fan J. Cryst. Growth 240 2002 479 483
29. D. Brunner, H. Angerer, E. Bustarret, F. Freudenberg, Höpler R., R. Dimitrov, O. Ambacher, and M. Stutzmann J. Appl. Phys. 82 1997 5090 5096
30. K. Uesugi, I. Suemune, T. Hasegawa, T. Akutagawa, and T. Nakamura Appl. Phys. Lett 76 2000 1285 1287
31. N. Sarkar, and S. Ghosh Solid State Commun. 149 2009 1288 1291
32. Y.R. Park, and K.J. Kima J. Appl. Phys. 94 2003 6401 6404
33. W.Z. Shen, L.F. Jiang, H.F. Yang, F.Y. Meng, H. Ogawa, and Q.X. Guo Appl. Phys. Lett. 80 2002 2063 2065
34. B. Bansal, V.K. Dixit, V. Venkataraman, and H.L. Bhat Appl. Phys. Lett. 90 2007 10195
35. G.D. Cody, T. Tiedje, B. Abeles, B. Brooks, and Y. Goldstein Phys. Rev. Lett. 47 1981 1480 1483
36. A. Paleari, F. Meinardi, A. Lauria, R. Lorenzi, and N. Chiodini Appl. Phys. Lett. 91 2007 141913
37. S.M. Wasim, Rincoń C., Marín G., P. Bocaranda, and Hernández E. Phys. Rev. B 64 2001 195101