Rutile-type oxide-diluted magnetic semiconductor: Mn-doped SnO2

Applied Physics Letters

Volumn 80, Issue 1, 2002, Pages 94-96

  Kimura, H ^a   Fukumura, T ^b   Kawasaki, M ^b   Inaba, K ^a   Hasegawa, T ^a   Koinuma, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIZATION MEASUREMENTS; MN CONTENT; MN-DOPED SNO; PARAMAGNETIC BEHAVIOR; POSITIVE MAGNETORESISTANCE; RUTILE STRUCTURE; SB DOPING; SYSTEMATIC CHANGES;

ELECTRIC RESISTANCE; EPITAXIAL FILMS; LATTICE CONSTANTS; MAGNETIC SEMICONDUCTORS; OXIDE FILMS; OXIDE MINERALS; PARAMAGNETISM; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; TIN;

MANGANESE;

EID: 79956017738     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430856     Document Type: Article

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