Temperature dependent band gap shrinkage in GaN: Role of electron-phonon interaction

Solid State Communications

Volumn 149, Issue 31-32, 2009, Pages 1288-1291

  Sarkar, Niladri ^a   Ghosh, Subhasis ^a  

^a JAWAHARLAL NEHRU UNIVERSITY   (India)

Author keywords

A. GaN; D. Band gap; E. Photoluminscence

Indexed keywords

A. GAN; BAND EDGE TRANSITION; BAND GAPS; D. BAND GAP; E. PHOTOLUMINSCENCE; EXPERIMENTAL DATA; EXPERIMENTAL INVESTIGATIONS; LOWER ENERGIES; NEAR BAND EDGE; RED SHIFT; SEMIEMPIRICAL RELATIONS; SPECTRAL FUNCTION; TEMPERATURE DEPENDENT;

ELECTRON-PHONON INTERACTIONS; ENERGY GAP; GALLIUM ALLOYS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SHRINKAGE;

GALLIUM NITRIDE;

EID: 67649219109     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.05.008     Document Type: Article

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