Determination of optical dispersion and film thickness of semiconducting disordered layers by transmission measurements: Application for chemically vapor deposited Si and SnO2 film

Applied Physics Letters

Volumn 70, Issue 2, 1997, Pages 246-248

  Davazoglou, D ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001274944     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118379     Document Type: Article

References (11)

1. J. C. Manifacier, J. Gasiot, and J. P. Filliard, J. Phys. E 9, 1002 (1976)
2. R. Swanepoel, J. Phys. E 16, 1214 (1983)
3. A. R. Forouhi and I. Bloomer, Phys. Rev. B 34, 7018 (1986)
4. F. James, Proceedings of the 1972 CERN Computing and Data Processing School, Pertisau, Austria, 10-24 September 1972.
5. A full discussion of the visibility of interference fringes is made in M. Born and E. Wolfe, Principles of Optics 3rd ed. (Pergamon, 1965), p. 265.
6. O. S. Heavens Optical Properties of Thin Solid Films (Dover, New York, 1965).
7. N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials, 2nd ed. (Clarendon, Oxford. 1979).
8. I. H. Malitson, J. Opt. Soc. Am. 55, 1205 (1965)
9. D. E. Aspnes, A. A. Studna, and E. Kinsborn, Phys. Rev. B 29, 768 (1984)
10. M. Janai, D. Allred, D. Booth, and B. Seraphin, Sol. Energy Mater. 1, 11 (1979)
11. E. Santhi, V. Dutta, A. Banerjee, and K. Copra, J. Appl. Phys. 51, 6243 (1981)