Influence of drain voltage on MOSFET threshold voltage determination by transconductance change and gm/Id methods

2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011

Volumn , Issue , 2011, Pages 150-153

  Rudenko, T ^a   Kilchytska, V ^b   Arshad, M K Md ^b   Raskin, J P ^b   Nazarov, A ^a   Flandre, D ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODELING; DRAIN VOLTAGE; EXPERIMENTAL DATA; MOS-FET; MOSFETS; SOI-MOSFETS; THRESHOLD VOLTAGE EXTRACTION;

DRAIN CURRENT; MOSFET DEVICES; THRESHOLD VOLTAGE;

TRANSCONDUCTANCE;

EID: 79957981296     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2011.5758012     Document Type: Conference Paper

References (5)

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3. T. Rudenko, et al. Proc. EUROSOI 2011, p.25.
4. F. Andrieu, et al.,Symp. On VLSI Technology, 2010.
5. C.-K. Park, et al. IEEE TED, v. 38, 1991, p. 399.