On the MOSFET threshold voltage extraction by transconductance and transconductance-to-current ratio change methods: Part iieffect of drain voltage

IEEE Transactions on Electron Devices

Volumn 58, Issue 12, 2011, Pages 4180-4188

  Rudenko, Tamara ^a   Kilchytska, Valeriya ^b   Md Arshad, Mohd Khairuddin ^b,c   Raskin, Jean Pierre ^b   Nazarov, Alexey ^a   Flandre, Denis ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^c UNIVERSITY MALAYSIA PERLIS   (Malaysia)

Author keywords

MOSFET threshold voltage extraction; transconductance change method; transconductance to current ratio; unified charge control model (UCCM)

Indexed keywords

ANALYTICAL EXPRESSIONS; ANALYTICAL MODELING; DRAIN VOLTAGE; EXPERIMENTAL DATA; MOS-FET; MOSFETS; SOI-MOSFETS; THRESHOLD VOLTAGE EXTRACTION; TRANSCONDUCTANCE-TO-CURRENT RATIO; UNIFIED CHARGE CONTROL MODEL (UCCM);

MOSFET DEVICES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DRAIN CURRENT;

EID: 82155166233     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2168227     Document Type: Article

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