GmId method for threshold voltage extraction applicable in advanced MOSFETs with nonlinear behavior above threshold

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 930-932

  Flandre, Denis ^a   Kilchytska, Valeria ^a   Rudenko, Tamara ^b  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

FinFET; modeling; MOSFETs; silicon on insulator technology; threshold voltage; ultrathin dielectrics; ultrathin silicon

Indexed keywords

FINFET; MODELING; MOSFETS; ULTRATHIN DIELECTRICS; ULTRATHIN SILICON;

GATE DIELECTRICS; INTEGRATED CIRCUITS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 77956170365     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2055829     Document Type: Article

References (10)

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