Annealing with Ni for ohmic contact formation on ICP-etched p-GaN

Electronics Letters

Volumn 44, Issue 2, 2008, Pages 155-157

  Hu, C Y ^a   Ao, J P ^a   Okada, M ^a   Ohno, Y ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONTACT RESISTANCE; GALLIUM NITRIDE;

OXYGEN AMBIENT; REGROWTH PROCESS;

OHMIC CONTACTS;

EID: 38649096918     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20082907     Document Type: Article

References (10)

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