Effects of Mg doping concentration on the band gap of ZnO/Mg xZn1-xO multilayer thin films prepared using pulsed laser deposition method

Journal of Electroceramics

Volumn 23, Issue 2-4, 2009, Pages 442-446

  Cho, Ja Young ^a   Kim, In Ki ^a   Jung, In Ok ^a   Moon, Jong Ha ^a   Kim, Jin Hyeok ^a  

^a Chonnam National University   (South Korea)

Author keywords

MgO; Multilayer; PLD; UV detector; ZnxMg1 xO; ZnO

Indexed keywords

ABSORPTION EDGES; ALTERNATE LAYERS; ALTERNATING LAYERS; BAND GAP ENERGY; BAND GAPS; CROSS-SECTIONAL TEM; CRYSTALLINITIES; EPITAXIAL ORIENTATION RELATIONSHIP; LASER FLUENCES; MG-DOPING; MGO; MULTI-LAYER THIN FILM; OXYGEN PARTIAL PRESSURE; PLD; PULSED LASER; REPETITION RATE; SHORTER WAVELENGTH; SUBSTRATE TEMPERATURE; TEM; THICKNESS OF THE FILM; UV-VIS SPECTRA; UV-VIS SPECTROSCOPY; ZNO;

DEPOSITION; DIFFRACTION; ENERGY GAP; MULTILAYER FILMS; MULTILAYERS; OPTICAL PROPERTIES; OXYGEN; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; PULSED LASERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

FILM PREPARATION;

EID: 73449109883     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-008-9485-3     Document Type: Article

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