Polarization mechanism of oxygen vacancy and its influence on dielectric properties in ZnO

Chinese Physics Letters

Volumn 28, Issue 2, 2011, Pages

  Wang, Li Na ^a   Fang, Xiao Yong ^a   Hou, Zhi Ling ^b   Li, Ya Lin ^a   Kun, Wang ^a   Yuan, Jie ^c   Cao, Mao Sheng ^b  

^a YANSHAN UNIVERSITY   (China)

^b BEIJING INSTITUTE OF TECHNOLOGY   (China)

^c MINZU UNIVERSITY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; ENERGY GAP; II-VI SEMICONDUCTORS; PHOTOELECTRICITY; POLARIZATION; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

AB INITIO; BLUE SHIFT; DIELECTRIC FUNCTIONS; DIELECTRICS PROPERTY; ENERGY BANDGAPS; MATERIAL APPLICATION; PHOTOELECTRICS; SHIFT-AND; STRUCTURE PROPERTY;

OXYGEN VACANCIES;

EID: 79952464318     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/2/027101     Document Type: Article

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