SCOPUS 정보 검색 플랫폼

Volumn 99, Issue 20, 2011, Pages

Microwave performance of 100 nm-gate In0.53Ga 0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

(4) Shi, J a Wichmann, N a Roelens, Y a Bollaert, S a

a UNIV LILLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

120 GHZ; ADHESIVE BONDING TECHNIQUES; BULK SUBSTRATES; CUT-OFF; FLEXIBLE SUBSTRATE; GATE LENGTH; HIGH-SPEED PROCESSING; MICROWAVE CHARACTERISTICS; MICROWAVE PERFORMANCE; PLASTIC FLEXIBLE; POLYIMIDE SUBSTRATE; RADIO-FREQUENCY APPLICATIONS; RIGID SUBSTRATES;

ELECTRON MOBILITY; INDIUM PHOSPHIDE; POLYIMIDES; SUBSTRATES; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 81855197988 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3663533 Document Type: Article

Times cited : (14)

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