Investigation on the electrical characteristics of a pentacene thin-film transistor and its reliability under positive drain bias stress

Semiconductor Science and Technology

Volumn 26, Issue 12, 2011, Pages

  Fan, Ching Lin ^a   Chiu, Ping Cheng ^a   Lin, Yu Zuo ^a   Yang, Tsung Hsien ^a   Chiang, Chin Yuan ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNELS; CHANNEL LAYERS; CHANNEL LENGTH; DRAIN BIAS; DRAIN-INDUCED BARRIER LOWERING; ELECTRICAL CHARACTERISTIC; ELECTRICAL FIELD; FIELD-EFFECT MOBILITIES; GATE INSULATOR; GRAIN SIZE; ORGANIC THIN FILM TRANSISTORS; PENTACENE THIN-FILM TRANSISTORS; PENTACENES; PERFORMANCE DEGRADATION; SOURCE/DRAIN ELECTRODES; TRAP STATE DENSITY; VERTICAL ELECTRICAL FIELDS;

DEGRADATION; DEPOSITION RATES; THIN FILM TRANSISTORS;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 81555220957     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/12/125007     Document Type: Article

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