Thermal characterization of vertical silicon nanowires

Journal of Materials Research

Volumn 26, Issue 15, 2011, Pages 1958-1962

  Stranz, Andrej ^a   Waag, Andreas ^a   Peiner, Erwin ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

Nanoscale; Thermal conductivity; Thermoelectric

Indexed keywords

3-OMEGA METHOD; BULK SILICON; CRYOGENIC TEMPERATURES; DEEP REACTIVE ION ETCHING; NANO SCALE; NANOPILLARS; ON CHIPS; SILICON NANOWIRES; SILICON WIRES; SINGLE WIRES; TEMPERATURE RANGE; TESTING DEVICE; THERMAL CHARACTERIZATION; THERMAL CONDUCTANCE; THERMOELECTRIC; THERMOELECTRIC MATERIAL; TOP-DOWN PROCESS; VERTICALLY ALIGNED;

NANOWIRES; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; THERMOELECTRICITY; WIRE;

THERMAL CONDUCTIVITY;

EID: 81455159251     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2011.60     Document Type: Article

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