High efficiency Ka-band power amplifier MMIC utilizing a high voltage dual field plate GaAs PHEMT process

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2011, Pages

  Campbell, Charles F ^a   Dumka, Deep C ^a   Kao, Ming Yih ^a   Fanning, David M ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

Ka band; MMIC; Power Amplifier

Indexed keywords

CONTINUOUS WAVES; FIELD PLATES; GAAS; HIGH VOLTAGE; KA BAND; KA-BAND POWER AMPLIFIER; POWER-ADDED EFFICIENCY; SATURATED OUTPUT POWER;

EFFICIENCY; GALLIUM ARSENIDE; GALLIUM NITRIDE; INTEGRATED CIRCUITS; INTEGRATION; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 81455142447     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2011.6062436     Document Type: Conference Paper

References (11)

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7. TGA2575 Ka-Band 4 Watt Power Amplifier, TriQuint Semiconductor Datasheet, www.TriQuint.com.
8. C. F. Campbell et al., "Design and Performance of a High Efficiency Ka-band Power Amplifier MMIC," 2010 Compound Semiconductor IC Symp. Dig., pp.191-194.
9. M. Y. Kao et al., "State-of-the-art GaN HEMTs for K- and Kaband Power Applications," 2010 GOMACTech Dig., pp.239- 241.
10. D. C. Dumka et al., "Development of Ka-band GaAs pHEMTs with Output Power over 1 W/mm," 2010 Compound Semiconductor IC Symp. Dig., pp.217-220.
11. C. F. Campbell, "Probe Based Simulation Technique for Modeling Saturated Power Amplifiers," Accepted for publication, 2011 European Microwave conference.