Ka-band MMIC high power amplifier (4W at 30 GHz) with record compact size

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2005, Pages 232-235

  Kong, Kris ^a   Nguyen, Bruce ^a   Nayak, Sabyasachi ^a   Kao, Ming Yih ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH POWER AMPLIFIERS (HPA); KA-BAND;

HIGH ELECTRON MOBILITY TRANSISTORS; POWER AMPLIFIERS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 30944440726     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2005.1531822     Document Type: Conference Paper

References (9)

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3. M.K. Siddiqui, et al., "A High Power Broadband Monolithic Power Amplifier for Ka-band Ground Terminals", 1999 IEEE MTT-S Digest. 951-954.
4. Michael R. Lyons, et al, "Design of Low-Cost 4W & 6W MMIC High Power Amplifiers for Kaband Modules", 2004 IEEE MTT-S Digest, 1673-1676.
5. M.Komaru et al., "1 Watt Compact Ka-Band MMIC Power Amplifiers Using Lumped Element Matching Circuits", 1998 MTT-S Digest, 1659-1662.
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8. P.M. Smith et al, "Progress in GaAs Metamorphic HEMT Technology for Microwave Applications," 2003 IEEE GaAs IC Symp. Dig., pp.21-24, 2003.
9. S. Chen, et.al.,"A Ka/Q-Band 2 Watt MMIC Power Amplifier Using Dual Recess 0.15μm PHEMT Process", 2004 IEEE MTT-S Int Microwave Symp. Dig., vol 3 pp. 1669-1672, June 2004.