Development of Ka-band GaAs pHEMTs with output power over 1 W/mm

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2010, Pages

  Dumka, Deep C ^a   Kao, Ming Yih ^a   Beam, Edward ^a   Chou, Tso Min ^a   Tserng, Hua Quen ^a   Fanning, David M ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

AlGaAs InGaAs; GaAs; Ka band; Microwave; Millimeter wave; pHEMT; Power

Indexed keywords

ALGAAS/INGAAS; GAAS; KA BAND; PHEMT; POWER;

ACTIVATION ENERGY; ELECTRONIC EQUIPMENT TESTING; GALLIUM ALLOYS; GALLIUM ARSENIDE; INTEGRATED CIRCUITS; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; SEMICONDUCTING GALLIUM;

DC POWER TRANSMISSION;

EID: 78650083751     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2010.5619628     Document Type: Conference Paper

References (6)

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2. A. M. Darwish, K. Boutros, B. Luo, B. Huebschman, E. Viveiros, and H. A. Hung, "4-watt Ka-band AlGaN/GaN power amplifier MMIC," IEEE Int. Microwave Symp. Dig., pp. 730-733, 2006.
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4. S. Chen, S. Nayak, M. Y. Kao, and J. Delaney, "A Ka/Qband 2 Watt MMIC Power Amplifier Using Dual Recess 0.15um PHEMT Process," IEEE MTT-S Int. Microwave Symp. Dig., pp. 1669-1672, 2004.
5. K. S. Kong, B. Nguyen, S. Nayak, and M. Y. Kao, "Ka-Band MMIC High Power Amplifier (4W at 30 GHz) with Record Compact Size," IEEE Compound Semiconductor IC Symp. Dig., pp. 232-235, 2005.
6. D. M. Fanning, A. Balistreri, E. Beam, K. Decker, S. Evans, R. Eye, W. Gaiewski, T. Nagle, P. Saunier, H. Q. Tserng, "High Voltage GaAs pHEMT Technology for S-band High Power Amplifiers," Compound Semiconductor ManTech Dig., pp. 172-176, 2007.