Fully monolithic 4 watt high efficiency Ka-band power amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1999, Pages 947-950

  Komiak, J J ^a   Kong, W ^a   Chao, P C ^a   Nichols, K ^a  

^a LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

KA-BAND; OUTPUT POWER;

BANDWIDTH; EFFICIENCY; ELECTRIC POWER SUPPLIES TO APPARATUS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICE MANUFACTURE;

POWER AMPLIFIERS;

EID: 0033362906     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. J. J. Komiak, W. Kong, P.C. Chao, K. Nichols, "3 Watt Ka-Band MMIC HPA and Driver Amplifier Implemented in a Fully Selective 0.15 um Power PHEMT Process," 1998 IEEE GaAs IC Symposium Digest, 45-48.
2. M. K. Siddiqui, A. K. Sharma, L. G. Callejo, R. Lai, "A High Power and High Efficiency Monolithic Power Amplifier for Local Multipoint Distribution Service," 1998 IEEE MTT-S IMS Digest, 569-572.