Probe based simulation technique for modeling saturated power amplifiers

European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011

Volumn , Issue , 2011, Pages 176-179

  Campbell, Charles F ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

Cripps's method; Gallium Nitride; load pull; saturated power amplifiers

Indexed keywords

ANALYSIS TECHNIQUES; ASSOCIATED GAIN; CONTINUOUS WAVE; CRIPPS'S METHOD; GAN POWER AMPLIFIER; HIGH POWER AMPLIFIER; IN-SITU; LOAD IMPEDANCE; LOAD PULL; MEASURED RESULTS; NETWORK LOSS; NETWORK SYMMETRIES; NONLINEAR SIMULATIONS; OUTPUT POWER; POWER-ADDED EFFICIENCY; PROBE-BASED; SIMULATION TECHNIQUE; SINGLE STAGE; TRANSISTOR CELLS;

COMPUTER SIMULATION; GALLIUM NITRIDE; MICROWAVE INTEGRATED CIRCUITS; MICROWAVES; POWER AMPLIFIERS; PROBES;

HIGH FREQUENCY AMPLIFIERS;

EID: 84855792307     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S. Cripps, "A Theory for the Prediction of GaAs FET Load-Pull Power Contours," IEEE Intl. Microwave Symp., 1983, pp. 221-223.
2. D. C. Dumka, et al., "Development of Ka-band GaAs pHEMTSs with Output Power over 1 W/mm," 2010 IEEE CSIC Symposium, 2010, pp. 217-220.
3. TriQuint Semiconductor Datasheet, TGF2023-10.
4. Bond Wire Modeling Standard. EIA/JEDEC Standard EIA/JESD59: Electronics Industries Association, June 1997.