A family of 1, 2 and 4-watt power amplifier MMICs for cost effective VSAT ground terminals

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2005, Pages 224-227

  Mahon, S ^a,b   Dadello, A ^b   Harvey, J ^a,b   Bessemoulin, A ^a,b  

^a IEEE   (United States)

^b Mimix Broadband Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

POWER ADDED EFFICIENCY; VSAT;

HIGH ELECTRON MOBILITY TRANSISTORS; MICROPROCESSOR CHIPS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

POWER AMPLIFIERS;

EID: 30944444427     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2005.1531820     Document Type: Conference Paper

References (7)

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3. S. Chen et al., "A Balanced 2 watt Compact pHEMT Power Amplifier MMIC for Ka-band Applications," 2003 IEEE International Microwave Symp. Dig., pp. 847-850.
4. Y. Butel et al., "Low cost MMIC chipset for VSAT ground terminals," to be published in European Gallium Arsenide and other Compound Semiconductors Application Symposium (GAAS2005), Paris, 3-4 October 2005.
5. J. Schellenberg, "1 and 2 watt MMIC Power Amplifier for Commercial K/Ka-band Applications," 2002 IEEE International Microwave Symp. Dig., pp. 445-448.
6. F. Colomb, A. Platzker, "2 and 4 watt Ka-band GaAs pHEMT Power Amplifier MMICs," 2003 IEEE International Microwave Symp. Dig., pp. 843-846.
7. M. Chertouk et al., "Manufacturable 0.15 um pHEMT Process for High Volume and Low Cost on 6" GaAs Substrates: The First 0.15 μm PHEMT 6"GaAs Foundry Fab," 2002 GaAs MANTECH Conference.