Strained Si surface channel MOSFETS for high-performance CMOS technology

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2001, Pages 116-117

  Rim, K ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON MOBILITY; EPITAXIAL GROWTH; HOLE MOBILITY; SEMICONDUCTING SILICON; TENSILE STRENGTH; TRANSCONDUCTANCE;

GEOMETRIC SCALING;

MOSFET DEVICES;

EID: 0035054847     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Si/SiGe CMOS: Can it extend the lifetime of Si?
2. Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si MOSFETs
3. Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFETs
4. Enhanced hole mobilities in surface-channel strained-Si p-MOSFETs
5. Strain dependence of the performance enhancement in strained-Si n-MOSFETs
6. Fabrication and analysis of deep submicron strained-Si n-MOSFETs