Electron-electron interaction in high-quality epitaxial grapheme

New Journal of Physics

Volumn 13, Issue , 2011, Pages

  Pan, W ^a   Ross III, A J ^a   Howell, S W ^a   Ohta, T ^a   Friedmann, T A ^a   Liang, C T ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONDUCTIVITY; ELECTRON TRANSPORT; EPITAXIAL GRAPHENE; HIGH QUALITY; LOGARITHMIC TEMPERATURE; SIC SUBSTRATES; SINGLE-PARTICLE MODEL; TEMPERATURE DEPENDENCE; WEAK LOCALIZATION;

ELECTRON-ELECTRON INTERACTIONS; EPITAXIAL FILMS; EPITAXIAL GROWTH; GRAPHENE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TEMPERATURE DISTRIBUTION;

ELECTRONS;

EID: 81255176154     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/13/11/113005     Document Type: Article

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