Growth and characteristics of Zn-Se-S thin layers by dip method

Journal of Alloys and Compounds

Volumn 509, Issue 39, 2011, Pages 9425-9427

  Chate, P A ^a   Sathe, D J ^b   Hankare, P P ^c  

^a JSM College   (India)

^b KIT's College of Engineering   (India)

^c SHIVAJI UNIVERSITY   (India)

Author keywords

Chemical synthesis; Nanostructures; Semiconductors; Thin films

Indexed keywords

BAND GAPS; CHEMICAL SYNTHESIS; COMPOSITE THIN FILMS; DIP METHOD; ELECTRICAL CONDUCTIVITY; HEXAGONAL PHASIS; POLYCRYSTALLINE; ROOM TEMPERATURE; THIN LAYERS; XRD;

ELECTRIC CONDUCTIVITY; ENERGY GAP; NANOCOMPOSITE FILMS; SEMICONDUCTING SELENIUM COMPOUNDS; SYNTHESIS (CHEMICAL); ZINC; ZINC SULFIDE;

THIN FILMS;

EID: 81155159761     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.06.101     Document Type: Article

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