Growth of n-type and p-type ZnSe thin films using an electrochemical technique for applications in large area optoelectronic devices

Journal of Materials Science: Materials in Electronics

Volumn 9, Issue 3, 1998, Pages 231-235

  Samantilleke, A P ^a   Boyle, M H ^a   Young, J ^a   Dharmadasa, I M ^a  

^a SHEFFIELD HALLAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRODEPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; FILM GROWTH; LIGHT ABSORPTION; LOW TEMPERATURE EFFECTS; OPTOELECTRONIC DEVICES; PHOTOELECTROCHEMICAL CELLS; SEMICONDUCTOR DOPING; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ANNEALING; ELECTROCHEMISTRY; ENERGY GAP; FLUORESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; THIN FILM DEVICES;

ELECTROCHEMICAL DEPOSITION; GLOW DISCHARGE OPTICAL EMISSION SPECTROSCOPY; X RAY FLUORESCENCE; ZINC SELENIUM THIN FILMS; GLOW DISCHARGE OPTICAL EMISSION SPECTROSCOPY (GDOES); ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTING FILMS;

EID: 0032095412     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008886410204     Document Type: Article

References (7)

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4. A. P. SAMANTILLEKE, M. H. BOYLE, J. YOUNG and I. M. DHARMADASA, J. Mater. Sci.: Mater. Electron. (Submitted in Sep. 1997).
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