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Journal of Alloys and Compounds

Volumn 490, Issue 1-2, 2010, Pages 350-352

Effect of temperature on various properties of photoelectrochemical cell

(4) Hankare, P P a Chate, P A b Sathe, D J a Jadhav, B V a

a SHIVAJI UNIVERSITY (India)

b JSM College (India)

Author keywords

Chalcogenides; Chemical synthesis; Interfaces; Semiconductor

Indexed keywords

ANNEALED TEMPERATURE; CHEMICAL SYNTHESIS; DIP METHOD; EFFECT OF TEMPERATURE; FILL FACTOR; FLAT BAND POTENTIAL; LOW RESISTANCE; PERFORMANCE PARAMETERS; PHOTOANODE; PHOTOELECTRODE; REVERSE-SATURATION CURRENTS; TEMPERATURE DEPENDENCE; ZINC SULPHIDE;

AMORPHOUS FILMS; ANNEALING; CHALCOGENIDES; OPEN CIRCUIT VOLTAGE; PHOTOELECTROCHEMICAL CELLS; SODIUM; SWITCHING CIRCUITS; ZINC; ZINC SULFIDE;

SYNTHESIS (CHEMICAL);

EID: 74149088525 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2009.09.184 Document Type: Article

Times cited : (4)

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