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Volumn 56, Issue 28, 2011, Pages 10543-10549

Electrodeposition of Cu-doped ZnO nanowire arrays and heterojunction formation with p-GaN for color tunable light emitting diode applications

(4) Lupan, O a,b Pauporte T a Viana, B c Aschehoug, P c

a PSL RESEARCH UNIVERSITY (France)

b TECHNICAL UNIVERSITY OF MOLDOVA (Moldova)

c UNIVERSITÉ PIERRE ET MARIE CURIE (France)

Author keywords

Copper doping; Electrodeposition; Heterojunction; Light emitting diode; Violet electroluminescence; ZnO

Indexed keywords

BAND GAP ENGINEERING; COLOR TUNABLE; COPPER DOPING; CU-DOPED ZNO; ELECTROCHEMICAL BEHAVIORS; ELECTROCHEMICAL REACTIONS; ELECTROLYTIC BATHS; EPITAXIALLY GROWN; HEXAGONAL STRUCTURES; HIGH QUALITY; HOST LATTICE; LOW TEMPERATURES; MG-DOPED; NANOMATERIAL; NEAR BAND EDGE EMISSIONS; PURE ZNO; QUANTUM WELL; RAMAN TECHNIQUES; RED-SHIFTED; SINGLE-CRYSTALLINE; SPECTRAL REGION; XRD; ZNO; ZNO NANOWIRES; ZNO NWS;

COPPER; DIODES; ELECTRODEPOSITION; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT; LIGHT EMISSION; NANOWIRES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; TIN; TIN OXIDES; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 80755176041 PISSN: 00134686 EISSN: None Source Type: Journal
DOI: 10.1016/j.electacta.2011.02.004 Document Type: Conference Paper

Times cited : (93)

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