Improvement of current leakage in the InAs photodetector by molecular beam epitaxy

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 167-171

  Lin, Ray Ming ^a   Tang, Shiang Feng ^b   Lee, Si Chen ^b   Kuan, C H ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting indium compounds; B3. Infrared devices

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; HEAT RADIATION; INFRARED DETECTORS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

INDIUM ARSENIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035398734     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00657-1     Document Type: Conference Paper

References (10)