AlGaN transition layers on Si (111) substrates - Observations of microstructure and impact on material quality

Materials Research Society Symposium Proceedings

Volumn 1068, Issue , 2008, Pages 147-152

  Roberts, John C ^a   Cook Jr , James W ^a   Rajagopal, Pradeep ^a   Piner, Edwin L ^a   Linthicum, Kevin J ^a  

^a NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; AMORPHOUS SILICON; GALLIUM ARSENIDE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; LATTICE MISMATCH; MICROSTRUCTURE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR ALLOYS; SILICON; SILICON ALLOYS; SILICON CARBIDE; SUBSTRATES;

DISLOCATION DENSITIES; EPITAXIAL STRUCTURE; MATERIAL QUALITY; MICRO-STRUCTURAL CHARACTERISTICS; SI(111) SUBSTRATE; SILICON SUBSTRATES; THERMAL AND LATTICE MISMATCHES; TRANSITION LAYERS;

GALLIUM ALLOYS;

EID: 57649092285     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1068-c06-03     Document Type: Conference Paper

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