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Journal of Applied Physics

Volumn 110, Issue 8, 2011, Pages

Process driven oxygen redistribution and control in Si0.7Ge 0.3/HfO2/TaN gate stack film systems

(6) Lysaght, Patrick S a Woicik, Joseph C b Huang, Jeff a Oh, Jungwoo a Min, Byoung Gi a Kirsch, Paul D a

a SEMATECH (United States)

b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORE LINES; ELECTRON ENERGY LOSS; EQUIVALENT OXIDE THICKNESS; EXTENDED X-RAY ABSORPTION FINE STRUCTURE MEASUREMENTS; GATE LEAKAGE CURRENT DENSITY; GATE STACKS; GE-SEGREGATION; PLASMA NITRIDATION; PROCESS-DRIVEN; SI OXIDATION; SI SUBSTRATES; TRANSMISSION ELECTRON MICROGRAPH;

ELECTRON ENERGY LOSS SPECTROSCOPY; EMISSION SPECTROSCOPY; ENERGY DISSIPATION; GERMANIUM; HAFNIUM OXIDES; LEAKAGE CURRENTS; LOGIC GATES; OXIDATION; SILICON ALLOYS; SURFACE SEGREGATION; TANTALUM COMPOUNDS;

SILICON;

EID: 80655141595 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3651519 Document Type: Article

Times cited : (3)

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