Structural change in silicon from undercooled liquid state to crystalline state during crystallization

Journal of Crystal Growth

Volumn 294, Issue 1, 2006, Pages 16-21

  Watanabe, Masahito ^a   Higuchi, Kensuke ^a   Mizuno, Akitoshi ^a   Nagashio, Kosuke ^b   Kuribayashi, Kazuhiko ^b   Katayama, Yoshinori ^c  

^a GAKUSHUIN UNIVERSITY   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

A1. Nucleation; A1. X ray diffraction; A3. Growth from melt; B2. Semiconducting silicon

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; CRYSTALLIZATION; NUCLEATION; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE STATE; ELECTROMAGNETIC LEVITATION TECHNIQUE; GROWTH FROM MELT; UNDERCOOLED MOLTEN SILICON;

SEMICONDUCTING SILICON;

EID: 33747843735     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.05.078     Document Type: Article

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