Tuning reactive epitaxy of silicides with surface steps: Silicide quantum dot arrays on Si(111)

Superlattices and Microstructures

Volumn 44, Issue 4-5, 2008, Pages 378-384

  Fernández, Laura ^a   Löffler, Mathias ^b   Cordón, Javier ^a   Ortega, Enrique ^a,c,d  

^a UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c DONOSTIA INTERNATIONAL PHYSICS CENTER DIPC   (Spain)

^d CENTRO MIXTO CSIC UPV EHU   (Spain)

Author keywords

Cobalt silicide; Reactive epitaxy; Stepped surfaces

Indexed keywords

COBALT; CRYSTAL GROWTH; EPITAXIAL GROWTH; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICIDES; SILICON; SOIL CONSERVATION; TRANSITION METALS;

COBALT SILICIDE; COBALT SILICIDES; MISCUT ANGLES; NUCLEATION AND GROWTH; ONE-DIMENSIONAL ARRAYS; QUANTUM-DOT ARRAYS; REACTIVE EPITAXY; RING OPERATOR; SI (111); SILICON SURFACES; STEPPED SURFACES; SURFACE STEPS;

SCHOTTKY BARRIER DIODES;

EID: 53749083448     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.02.006     Document Type: Article

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