Quantitative determination of the charge density on surface steps on semiconductors by high-resolution local scanning-tunneling spectroscopy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 1159-1162

  Kemerink, M ^a   Reusch, T C G ^b   Bruls, D M ^a   Koenraad, P M ^a   Salemink, H W M ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

GaAs; p n Junction; Scanning tunneling microscopy; Surface step

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CHARGE; FERMI LEVEL; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPIC ANALYSIS;

SCANNING-TUNNELING SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036492841     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00326-0     Document Type: Article

References (5)