Temperature dependent transfer characteristics of graphene field effect transistors fabricated using photolithography

Current Applied Physics

Volumn 11, Issue 3 SUPPL., 2011, Pages

  Venugopal, Gunasekaran ^a,b   Kim, S J ^a  

^a Jeju National University   (South Korea)

^b KARUNYA UNIVERSITY   (India)

Author keywords

Graphene field effect transistors; Mobility; Photolithographic; Transconductance

Indexed keywords

BACK-GATE; DIRAC POINT; ELECTRONIC DEVICE; FABRICATED DEVICE; GRAPHENE LAYERS; GRAPHENE NANORIBBONS; PHOTOLITHOGRAPHIC; RESISTANCE INCREASE; SEMICONDUCTOR-TYPE; TEMPERATURE BEHAVIOR; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TRANSFER CHARACTERISTICS; TRANSPORT CHARACTERISTICS; VARIABLE RANGE HOPPING;

CARRIER MOBILITY; DRAIN CURRENT; FABRICATION; GRAPHENE; MONOLAYERS; PHOTOLITHOGRAPHY; TRANSCONDUCTANCE; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 80255122720     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.03.030     Document Type: Conference Paper

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