The effect of isopropyl alcohol concentration on the etching process of Si-substrates in KOH solutions

Sensors and Actuators, A: Physical

Volumn 171, Issue 2, 2011, Pages 436-445

  Zubel, Irena ^a   Rola, Krzysztof ^a   Kramkowska, Małgorzata ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

IPA; KOH; Silicon anisotropic etching; Surface tension

Indexed keywords

ADSORPTION PHENOMENA; ALCOHOL ADDITIVES; ALCOHOL CONCENTRATIONS; CONCENTRATION RANGES; CRYSTALLOGRAPHIC ORIENTATIONS; ETCH RATES; ETCHED SURFACE; ETCHING PROCESS; ETCHING SOLUTIONS; IPA; ISOPROPYL ALCOHOLS; KOH; KOH SOLUTION; SATURATION LEVELS; SILICON ANISOTROPIC ETCHING; SURFACE COVERAGES; SURFACE TENSION MEASUREMENTS;

ADSORPTION; ANISOTROPY; SURFACE PROPERTIES; SURFACE TENSION;

ANISOTROPIC ETCHING;

EID: 80055062693     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2011.09.005     Document Type: Article

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