Critical analysis of 14nm device options

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2011, Pages 5-8

  Oldiges, P ^a   Muralidhar, R ^a   Kulkarni, P ^a   Lin, C H ^a   Xiu, K ^a   Guo, D ^a   Bajaj, M ^b   Sathaye, N ^b  

^a IBM RESEARCH   (United States)

^b IBM RESEARCH INDIA   (India)

Author keywords

14nm technology; ETSOI; FinFET; PDSOI; performance modeling; TCAD

Indexed keywords

14NM TECHNOLOGY; ETSOI; FINFET; PDSOI; PERFORMANCE MODELING; TCAD;

GATES (TRANSISTOR); INTEGRATED CIRCUITS; NANOTECHNOLOGY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

EQUIPMENT;

EID: 80055022376     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2011.6035034     Document Type: Conference Paper

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