Simulation of phonon-limited mobility for nano-scale Si-based n-type non-planar device under general orientation and stress condition

Journal of Computational Electronics

Volumn 7, Issue 3, 2008, Pages 172-175

  Xiu, Kai ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

1D transport; Mobility; Non planar device; Stress

Indexed keywords

ELECTRIC WIRE; NANOTECHNOLOGY; SILICON; TRANSPORT PROPERTIES;

1D TRANSPORT; MOBILITY; NON-PLANAR DEVICE; PLANAR DEVICES; STRESS;

NANOSTRUCTURED MATERIALS;

EID: 50949095861     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-007-0164-4     Document Type: Article

References (6)

1. Stern, F., Howard, W.E.: Phys. Rev. 163, 816 (1967)
2. Laux, S.: IEDM 2004 Technical Digest 135 (2004)
3. Bir, G.L., Pikus, G.E.: Symmetry and Strain-Induced Effects in Semiconductors. Wiley, New York (1974)
4. Takagi, S., et al.: J. Appl. Phys. 80, 1567 (1996)
5. Fischetti, M.V., Laux, S.: J. Appl. Phys. 85, 7984 (1996)
6. Kotlyar, R., et al.: Appl. Phys. Lett. 84, 5270 (2004)