|
Volumn , Issue , 2008, Pages 137-140
|
Analytical model for point and line tunneling in a tunnel field-effect transistor
a,b a,b a,b b b,c |
Author keywords
[No Author keywords available]
|
Indexed keywords
ANALYTICAL EXPRESSIONS;
ANALYTICAL MODEL;
BAND GAPS;
DEVICE SIMULATORS;
DIELECTRIC THICKNESS;
DOPING CONCENTRATION;
GATE DIELECTRIC THICKNESS;
KEY PARAMETERS;
MOS-FET;
NANOMETER DIMENSIONS;
ON-CURRENT;
ONSET VOLTAGES;
SMALL BANDGAP;
SOURCE DOPING;
SUBTHRESHOLD;
TUNNELING CURRENT;
TWO-COMPONENT;
ELECTRIC POTENTIAL;
ENERGY GAP;
FIELD EFFECT TRANSISTORS;
GATE DIELECTRICS;
GATES (TRANSISTOR);
SIMULATORS;
TUNNELING (EXCAVATION);
WIND TUNNELS;
|
EID: 67650511375
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/SISPAD.2008.4648256 Document Type: Conference Paper |
Times cited : (100)
|
References (7)
|