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Volumn 22, Issue 9, 2011, Pages 1248-1257

Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method

Author keywords

[No Author keywords available]

Indexed keywords

AG CONTACTS; AG THICK FILM; AIR AMBIENT; BEST VALUE; CONTACT FORMATION; CONTACT STRUCTURE; CRYSTALLINE SILICON SOLAR CELLS; EXTRACTION PROCEDURE; MEASUREMENT TECHNIQUES; METAL CONTACTS; NITROGEN AMBIENT; POROUS SILICON SURFACES; SCREEN-PRINTED; SPECIFIC CONTACT RESISTANCES; TEST METHODOLOGY; TEST SAMPLES; TEST STRUCTURE; TLM METHOD; TRANSFER LENGTHS;

EID: 80054995332     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-011-0295-z     Document Type: Article
Times cited : (57)

References (32)
  • 8
    • 5844366369 scopus 로고
    • Report No. A1-TOR-64-207 (September, Wright-Patterson Air Force Base, OH, USA
    • W. Shockley, Report No. A1-TOR-64-207 (September 1964, Air Force Atomic Laboratory, Wright-Patterson Air Force Base, OH, USA)
    • (1964) Air Force Atomic Laboratory
    • Shockley, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.