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Journal of Materials Science: Materials in Electronics

Volumn 21, Issue 7, 2010, Pages 730-736

Specific contact resistance and metallurgical process of the silverbased paste for making ohmic contact structure on the porous silicon/p-Si surface of the silicon solar cell

(1) Vinod, P N a

a NAVAL PHYSICAL AND OCEANOGRAPHIC LABORATORY (India)

Author keywords

[No Author keywords available]

Indexed keywords

ADVERSE EFFECT; AIR AMBIENT; BARRIER PROPERTIES; CONTACT STRUCTURE; ELECTRICAL PROPERTY; HIGH TEMPERATURE; IN-DIFFUSION; INTERFACIAL MORPHOLOGIES; METAL CONTACTS; METALIZATIONS; METALLIZATIONS; METALLURGICAL PROCESS; OPTOELECTRONIC MATERIALS; PERFECT CONTACT; POROUS SILICON STRUCTURES; POROUS SILICON SURFACES; SCREEN-PRINTED; SEM; SI SURFACES; SILICON SURFACES; SINTERING PROCESS; SINTERING TEMPERATURES; SPECIFIC CONTACT RESISTANCES; THREE ORDERS OF MAGNITUDE;

CONTACT RESISTANCE; ELECTRIC PROPERTIES; FIRE RESISTANCE; METALLURGY; METALS; OHMIC CONTACTS; OPTOELECTRONIC DEVICES; SILICON SOLAR CELLS; SILVER; SINTERING; SOLAR CELLS; SURFACES;

POROUS SILICON;

EID: 77955575624 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-009-9986-0 Document Type: Article

Times cited : (11)

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