Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Behmenburg, H ^a   Khoshroo, L Rahimzadeh ^a   Eickelkamp, M ^a   Mauder, C ^a   Fieger, M ^a   Ketteniss, N ^a   Woitok, J ^b   Wamwangi, D ^a   Wuttig, M ^a   Hernandez, S Estevez ^c   Schapers T ^c   Heuken, M ^a,d   Vescan, A ^a   Kalisch, H ^a   Jansen, R H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b MALVERN INSTRUMENTS LTD   (United Kingdom)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSOLUTE VALUES; BARRIER THICKNESS; CURRENT GAINS; CUT-OFF; DEVICE PROPERTIES; ELECTRICAL PROPERTY; GATE LENGTH; GATE-LEAKAGE CURRENT; HALL MEASUREMENTS; HETEROSTRUCTURES; HIGH-RESOLUTION X-RAY DIFFRACTION; MAXIMUM DRAIN CURRENT; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOVPE; OSCILLATING FREQUENCIES; RADIO FREQUENCY MEASUREMENT; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SHEET CARRIER CONCENTRATION; SURFACE PASSIVATION; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

CRYSTALS; DRAIN CURRENT; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTRON GAS; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; LEAKAGE CURRENTS; ORGANOMETALLICS; PASSIVATION; TWO DIMENSIONAL ELECTRON GAS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

CARRIER CONCENTRATION;

EID: 79251640901     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880922     Document Type: Article

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