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Volumn 47, Issue 3, 2011, Pages 212-214

RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate

(10) Lecourt, F a Ketteniss, N b Behmenburg, H b Defrance, N a Hoel, V a Eickelkamp, M b Vescan, A b Giesen, C c Heuken, M c De Jaeger, J C a

a UNIV LILLE (France)

b RWTH AACHEN UNIVERSITY (Germany)

c AIXTRON AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYER THICKNESS; CURRENT GAIN CUTOFF FREQUENCY; GATE LENGTH; PEAK EXTRINSIC TRANSCONDUCTANCE; POWER GAIN CUTOFF FREQUENCIES; RF PERFORMANCE; SAPPHIRE SUBSTRATES;

CUTOFF FREQUENCY; DC POWER TRANSMISSION; ELECTRON MOBILITY; SAPPHIRE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79551703899 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el.2010.7512 Document Type: Article

Times cited : (12)

References (5)

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2
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5
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