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Volumn 22, Issue 9, 2011, Pages 1366-1371

Effect of ammoniating temperature on microstructure of one-dimensional GaN nanorods with Tb intermediate layer

Author keywords

Ammoniating temperature; GaN nanorods; Light emitting properties; Sputtering deposition

Indexed keywords

AMMONIATING TEMPERATURE; BAND GAPS; CRYSTALLINE QUALITY; GAN NANORODS; HEXAGONAL WURTZITE; INTERMEDIATE LAYERS; LIGHT EMITTING PROPERTIES; RED SHIFT; SI(111) SUBSTRATE; SINGLE-CRYSTALLINE; SPUTTERING DEPOSITION;

EID: 80054972484     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-011-0315-z     Document Type: Article
Times cited : (1)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.