Effectiveness of BaZrO3 buffer layer in SmBa2Cu 3Oy epitaxial growth on MgO substrate: A first-principles study

Journal of Applied Physics

Volumn 95, Issue 5, 2004, Pages 2309-2318

  Oba, Fumiyasu ^a,d   Sugawara, Yoshihiro ^b   Hasegawa, Katsuya ^c   Izumi, Teruo ^c   Shiohara, Yuh ^c   Hirayama, Tsukasa ^b   Yamamoto, Takahisa ^a   Ikuhara, Yuichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN FINE CERAMICS CENTER   (Japan)

^c SUPERCONDUCTIVITY RESEARCH LABORATORY   (Japan)

^d JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL POTENTIALS; INTERFACIAL STRUCTURES;

BARIUM COMPOUNDS; CRYSTAL ATOMIC STRUCTURE; DISLOCATIONS (CRYSTALS); ELASTICITY; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACIAL ENERGY; LATTICE CONSTANTS; PEROVSKITE; STIFFNESS; STOICHIOMETRY; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL GROWTH;

EID: 1642387210     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1641525     Document Type: Article

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